Material properties of silicon nitride substrates

High power density: Silicon nitride substrates have excellent power carrying capacity and are suitable for applications in high-power electronic devices.

High conversion efficiency: During the power conversion process, silicon nitride substrates can maintain high conversion efficiency and reduce energy loss.

High temperature performance: Silicon nitride substrates have excellent high-temperature stability and can work stably for a long time in a high-temperature environment without performance degradation due to temperature increase.

High speed: In high-frequency circuits, silicon nitride substrates can provide low-loss, high-speed transmission performance.

High thermal conductivity: Silicon nitride substrates have high thermal conductivity and can effectively export heat to avoid damage to electronic devices due to overheating.

Low thermal expansion coefficient: This helps maintain the stability and reliability of the circuit and reduce thermal stress caused by temperature changes.

High thermal shock resistance: Able to maintain structural integrity in an environment with rapid temperature changes.

Excellent mechanical properties: High bending strength and fracture toughness, more than twice that of aluminum nitride and aluminum oxide.