Polished Aluminum Nitride ALN Ceramic Substrate

Polished Aluminum Nitride ALN Ceramic Substrate

GRWAY® isa manufacturer and supplier of Polished Aluminum Nitride ALN Ceramic Substrate.The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests.

Aluminum Nitride ALN Ceramic Substrate PERFORMANCE

 - High thermal conductivity, high flexural strength, high temperature

 - Good electrical insulation

 - Low dielectric constant and loss

 - Able to be laser drilled, metallized, plated and brazed

Regular Dimensions of AlN Substrate/Wafer

PS: Other dimensions which are not listed are available upon your requests.

Aluminum Nitride (ALN) Ceramic Substrate Features

1.Uniform microstructure

2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives

3.High electrical resistivity

4.Thermal expansion coefficient close to that of Silicon

5.Resistance to corrosion and erosion

6.Excellent thermal shock resistance

7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidationoccurs around 780°C; the surface layer protects the bulk up to 1380°C).